A bipolar transistor (5) is the Abstract , page 1

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STATE TECHNICAL UNIVERSITY
them. N. Uh.BAUMAN





REPORT



RESEARCH
WORK



The study of semiconductor
devices



on topic:



“Bipolar transistors”



For research work performed
_______________ Voronchihin D. N.



signature, date



The head checked out
________________ Zagidullin R. Sh.



signature
date



Moscow, 2008



Abstract



Report 20 C., 3 h., 30 Fig., 1 source.



Object of research are
the bipolar transistors.



The purpose of this study was to develop a model
the characteristics of the transistors and their entry
library МС7, as well as installation
the operating point in the intermediate cascade
ULF and ULF setting in a given band
frequencies.



In the process the work was carried out
experimental studies
laboratory and modeling
experimental studies in
the program МС7.



The contents



Abstract – – – – – – – – – – – – – – – – – – – – –
– – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – 2



Contents – – – – –
– – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – –
– – – – – – – – – – -2



Symbols and abbreviations – – – – –
– – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – –
-3



Introduction – – – – – – – – – – – – – – – – – – – –
– – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – -3



  1. Definition
    model parameters of the transistor- – – – – –
    – – – – – – – – – – – – – – – – – – – – – 3




1.1 Definition of parameters
transistor models from the library МС7-
– – – – – – – – 3



1.2 Definition of parameters
model of the transistor from the experimental
stand – 8



  1. Installation
    the operating point – – – – – – – – – –
    – – – – – – – – – – – – – – – – – – – – – – – – – – – – – –
    13


  2. Amplifier
    cascade bipolar transistor- – – –
    – – – – – – – – – – – – – – – – – – 15




Conclusion- – – – – – –
– – – – – – – – – – – – – – – – – – – —
– – – – – – – – – – – – – – – – – – – – – – – – – – 19



Bibliography – – – – – – – – – – –
– – – – – – – – – — – – – – – – – – – – –
– – – – – – – – – – – – – – 19



App – – – – – – – – – – – – – – – – – –
– – – – – – — – – – – – – – – – – – – –
– – – – – – – – – – – – – 20



Symbols and abbreviations



МС7 – MicroCap7



LFA – low frequency amplifier



Ib – base current



Ik is the collector current



Uke – voltage
collector emitter



Ube – voltage
base-emitter



Ukb – voltage
the collector base



Сob – capacity
collector transition



Cjc – barrier
capacity of collector transition



Cje – barrier
the capacitance of the emitter junction



Fгр – boundary
frequency gain



Frequency response – amplitude-frequency
feature



Introduction



In the course of work we are pursuing
several purposes. In the first part of our
task – the creation of a model
experimentally-investigated
transistor and making it to the library
МС7 for future use. When
we use a program MODEL,
the adequacy of the model created this
we check the program, hoping
it transistor existing in
МС7. After receiving his model features
compare the created model with the existing one,
evaluation criteria – the coincidence output
characteristics of the control point with
up to 10%. Convinced of the adequacy of
work, use experimental
data and reference materials for
determining the program MODEL
all model parameters (static and
dynamic). Recorded calculated
transistor MC7 to the library.
The criterion of adequacy of the model again
is the coincidence of the experimental
and model output characteristics in
checkpoint (5 mA, 5V) with an accuracy of
up to 10%. In the second part we install
operating point and calculate the separation
capacity for ULF bipolar transistor.
Then analyze it with MC7,
for lkализируем it with Insistere.ku
and hope randelementmethoden
sector existing in МС7.202020202020202020202020
evaluation of the quality of gain we expect
total harmonic distortion of our
The ULF.



1.Definition
model parameters of the transistor



1.1 Definition of parameters
transistor models from the library МС7



In accordance with
the investigated transistor КТ315В. For
determination of the parameters of the build
a family of output characteristics for
the base current Ib=1, 2, 3, 4, 5 mA
in this case we use the following scheme:




Fig.1



Obtained output characteristics:



Fig.2



T
also
we need the input characteristics.
Here are the two characteristics
when Uke = 0; 5 V. Use
the following measurement scheme:



P

Fig.3


poluchennye features:





Fig.4


T


now
define static parameters
model using the program MODEL:







Fig.5

Fig.6





Fig.7











Fig.5

Fig.6

Fig.7

Fig.8














Now
refer to the dynamicparameters
model of the transistor, the use of
reference data. The designated voltage
emitter – base capacitance and collector
transition Ukb = 10 B
, Cob = 7 pF. Data insertion
in the corresponding table of the program
MODEL and expect
settings.





For the emitter junction barrier
capacitance Cje select on
the resulting lower barrier
capacity of collector transition of the Cjc,
that is Cje = Cic/10
= .





Time constant direct
the inclusion TF (defines
the average lifetime of minority carriers
in the database) may be determined by the boundary
Fгр frequency = 5 MHz and the value
BF = 202.02,
calculated above :




Permanent
time enable TR
for fused transistors usually
is set to 0.5-0.3 TF:





So we calculated all the parameters
model study of bipolar
transistor. Will make it to the library
МС7, creating a file with the extension *.lib:



* Q2T208K_NEW.lib



*****



*** Q2T208K_NEW


.MODEL
Q2T208K_NEW PNP (IS=9.99992 F BF=202.02 NF=1.00012 VAF=46.2499



+ IKF=80.3629 M ISE=1.350869 e-018 NE=1.52899 BR=4.10679
IKR=999.977 ISC=99.9999 P



+ NC=2 RE=367.168 M CJE=108.675 P VJE=700.002 M
MJE=499.771 M CJC=190.373 P VJC=700M


+
MJC=500.069 M TF=157.6 P XTF=500M VTF=10 ITF=10M TR=78.78 P EG=1.11)



To check the adequacy of the model
build the output characteristic,
using the scheme in Fig. designed
and submitted to the library of the transistor
КТ315Вnew when the base current Ib
= 400 µa.



Fig.9


Comparing
the values in the control point Uke
= 5 V, we get the following error
%:


eniya
in kontrolnoj point Schitanoe and
in
transistor2020202020202020202020202020202020202020202020202020202020202020202020202020202020202020

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